Diodes Incorporated DMNH6021SK3Q-13
- DMNH6021SK3Q-13
- Diodes Incorporated
- MOSFET N-CH 60V 50A TO252-2
- Transistors - FETs, MOSFETs - Single
- DMNH6021SK3Q-13 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 1011
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number DMNH6021SK3Q-13 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Diodes Incorporated |
Description MOSFET N-CH 60V 50A TO252-2 |
Package Jinftry-Reel® |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.1W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
Rds On (Max) @ Id, Vgs 23mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 20.1 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1143 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
DMNH6021SK3Q-13 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о DMNH6021SK3Q-13 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diodes Incorporated
DMT6007LFG-7
MOSFET N-CH 60V 15A PWRDI3333
DMTH4007SK3-13
MOSFET N-CH 60V 15A PWRDI3333
DMNH6042SPDQ-13
MOSFET N-CH 60V 15A PWRDI3333
DMP3015LSSQ-13
MOSFET N-CH 60V 15A PWRDI3333
DMPH4015SK3Q-13
MOSFET N-CH 60V 15A PWRDI3333
DMTH4007SPS-13
MOSFET N-CH 60V 15A PWRDI3333
DMP3008SFGQ-7
MOSFET N-CH 60V 15A PWRDI3333
DMTH8012LPSQ-13
MOSFET N-CH 60V 15A PWRDI3333
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: