Diodes Incorporated DMN10H099SFG-7
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- DMN10H099SFG-7
- Diodes Incorporated
- MOSFET N-CH 100V 4.2A PWRDI3333
- Transistors - FETs, MOSFETs - Single
- DMN10H099SFG-7 Лист данных
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3560
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number DMN10H099SFG-7 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET N-CH 100V 4.2A PWRDI3333 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package PowerDI3333-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 980mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs 80mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 25.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1172 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case 8-PowerVDFN |
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Picture 01
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