Diodes Incorporated DMHT6016LFJ-13
- DMHT6016LFJ-13
- Diodes Incorporated
- MOSFET 4 N-CH 14.8A VDFN5045-12
- Transistors - FETs, MOSFETs - Arrays
- DMHT6016LFJ-13 Лист данных
- 12-VDFN Exposed Pad
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2534
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number DMHT6016LFJ-13 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Diodes Incorporated |
Description MOSFET 4 N-CH 14.8A VDFN5045-12 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 12-VDFN Exposed Pad |
Supplier Device Package V-DFN5045-12 |
Power - Max - |
FET Type 4 N-Channel |
FET Feature Standard |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C 14.8A (Ta) |
Rds On (Max) @ Id, Vgs 22mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 864pF @ 30V |
Package_case 12-VDFN Exposed Pad |
DMHT6016LFJ-13 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о DMHT6016LFJ-13 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diodes Incorporated
DMGD7N45SSD-13
MOSFET 2NCH 450V 500MA 8SO
HTMN5130SSD-13
MOSFET 2NCH 450V 500MA 8SO
ZXMP3A17DN8TA
MOSFET 2NCH 450V 500MA 8SO
DMG1016UDW-7
MOSFET 2NCH 450V 500MA 8SO
DMP2200UDW-7
MOSFET 2NCH 450V 500MA 8SO
DMN65D8LDW-7
MOSFET 2NCH 450V 500MA 8SO
DMN63D8LDW-7
MOSFET 2NCH 450V 500MA 8SO
DMN2004DWK-7
MOSFET 2NCH 450V 500MA 8SO
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.