DHG30I1200HA

IXYS DHG30I1200HA

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • DHG30I1200HA
  • IXYS
  • DIODE GEN PURP 1.2KV 30A TO247
  • Diodes - Rectifiers - Single
  • DHG30I1200HA Лист данных
  • TO-247-2
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/DHG30I1200HALead free / RoHS Compliant
  • 4646
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
DHG30I1200HA
Category
Diodes - Rectifiers - Single
Manufacturer
IXYS
Description
DIODE GEN PURP 1.2KV 30A TO247
Package
Tube
Series
-
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247
Diode Type
Standard
Current - Average Rectified (Io)
30A
Voltage - Forward (Vf) (Max) @ If
2.26 V @ 30 A
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Capacitance @ Vr, F
-
Voltage - DC Reverse (Vr) (Max)
1200 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
200 ns
Operating Temperature - Junction
-55°C ~ 150°C
Package_case
TO-247-2

DHG30I1200HA Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/DHG30I1200HA

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/DHG30I1200HA

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/DHG30I1200HA

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о DHG30I1200HA ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/DHG30I1200HA
DHF30IM600QB,https://www.jinftry.ru/product_detail/DHG30I1200HA
DHF30IM600QB

DIODE GEN PURP 600V 30A TO3P

DSI30-12AC,https://www.jinftry.ru/product_detail/DHG30I1200HA
DSI30-12AC

DIODE GEN PURP 600V 30A TO3P

DS2-08A,https://www.jinftry.ru/product_detail/DHG30I1200HA
DS2-08A

DIODE GEN PURP 600V 30A TO3P

DH20-18A,https://www.jinftry.ru/product_detail/DHG30I1200HA
DH20-18A

DIODE GEN PURP 600V 30A TO3P

DNA30E2200FE,https://www.jinftry.ru/product_detail/DHG30I1200HA
DNA30E2200FE

DIODE GEN PURP 600V 30A TO3P

DHG60I600HA,https://www.jinftry.ru/product_detail/DHG30I1200HA
DHG60I600HA

DIODE GEN PURP 600V 30A TO3P

DSA2-18A,https://www.jinftry.ru/product_detail/DHG30I1200HA
DSA2-18A

DIODE GEN PURP 600V 30A TO3P

DSEP60-06AT,https://www.jinftry.ru/product_detail/DHG30I1200HA
DSEP60-06AT

DIODE GEN PURP 600V 30A TO3P

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP