DDA114EH-7

Diodes Incorporated DDA114EH-7

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • DDA114EH-7
  • Diodes Incorporated
  • TRANS 2PNP PREBIAS 0.15W SOT563
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • DDA114EH-7 Лист данных
  • SOT-563, SOT-666
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/DDA114EH-7Lead free / RoHS Compliant
  • 1166
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
DDA114EH-7
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer
Diodes Incorporated
Description
TRANS 2PNP PREBIAS 0.15W SOT563
Package
Tape & Reel (TR)
Series
-
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Power - Max
150mW
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Frequency - Transition
250MHz
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
Package_case
SOT-563, SOT-666

DDA114EH-7 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/DDA114EH-7

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/DDA114EH-7

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/DDA114EH-7

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о DDA114EH-7 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Diodes Incorporated
Diodes Incorporated,https://www.jinftry.ru/product_detail/DDA114EH-7
DCX144EU-7,https://www.jinftry.ru/product_detail/DDA114EH-7
DCX144EU-7

TRANS PREBIAS NPN/PNP SOT363

DCX143TU-7-F,https://www.jinftry.ru/product_detail/DDA114EH-7
DCX143TU-7-F

TRANS PREBIAS NPN/PNP SOT363

DDA124EU-7,https://www.jinftry.ru/product_detail/DDA114EH-7
DDA124EU-7

TRANS PREBIAS NPN/PNP SOT363

DDA114TU-7,https://www.jinftry.ru/product_detail/DDA114EH-7
DDA114TU-7

TRANS PREBIAS NPN/PNP SOT363

DDA123JU-7,https://www.jinftry.ru/product_detail/DDA114EH-7
DDA123JU-7

TRANS PREBIAS NPN/PNP SOT363

DDA143TU-7-F,https://www.jinftry.ru/product_detail/DDA114EH-7
DDA143TU-7-F

TRANS PREBIAS NPN/PNP SOT363

DCX144EH-7,https://www.jinftry.ru/product_detail/DDA114EH-7
DCX144EH-7

TRANS PREBIAS NPN/PNP SOT363

DDA114TU-7-F,https://www.jinftry.ru/product_detail/DDA114EH-7
DDA114TU-7-F

TRANS PREBIAS NPN/PNP SOT363

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP