Infineon Technologies D3501N36TXPSA1
- D3501N36TXPSA1
- Infineon Technologies
- DIODE GP 4870A BG-D12035K-1
- Diodes - Rectifiers - Single
- D3501N36TXPSA1 Лист данных
- DO-200AE
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 5656
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number D3501N36TXPSA1 |
Category Diodes - Rectifiers - Single |
Manufacturer Infineon Technologies |
Description DIODE GP 4870A BG-D12035K-1 |
Package Jinftry-Reel® |
Series - |
Mounting Type Chassis Mount |
Package / Case DO-200AE |
Supplier Device Package BG-D12035K-1 |
Diode Type Standard |
Current - Average Rectified (Io) 4870A |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 100 mA @ 4200 V |
Capacitance @ Vr, F - |
Voltage - DC Reverse (Vr) (Max) - |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -40°C ~ 160°C |
Package_case DO-200AE |
D3501N36TXPSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о D3501N36TXPSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
ND242S10KHPSA1
DIODE GP 1KV 261A BG-PB50ND-1
ND260N14KHPSA1
DIODE GP 1KV 261A BG-PB50ND-1
ND260N16KHPSA1
DIODE GP 1KV 261A BG-PB50ND-1
ND261N20KHPSA1
DIODE GP 1KV 261A BG-PB50ND-1
ND261N22KHPSA1
DIODE GP 1KV 261A BG-PB50ND-1
ND261N26KHPSA1
DIODE GP 1KV 261A BG-PB50ND-1
36DN30ELEMENTEVXPSA1
DIODE GP 1KV 261A BG-PB50ND-1
D255K06BXPSA1
DIODE GP 1KV 261A BG-PB50ND-1
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic