IXYS CS35-12IO4
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- CS35-12IO4
- IXYS
- SCR 1.2KV 120A TO208AC
- Thyristors - SCRs
- CS35-12IO4 Лист данных
- TO-208AC, TO-65-3, Stud
- Bulk
-
Lead free / RoHS Compliant - 1314
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number CS35-12IO4 |
| Category Thyristors - SCRs |
| Manufacturer IXYS |
| Description SCR 1.2KV 120A TO208AC |
| Package Bulk |
| Series - |
| Operating Temperature -40°C ~ 125°C |
| Mounting Type Chassis, Stud Mount |
| Package / Case TO-208AC, TO-65-3, Stud |
| Supplier Device Package TO-208AC (TO-65) |
| Current - Hold (Ih) (Max) 80 mA |
| Voltage - Off State 1.2 kV |
| Voltage - Gate Trigger (Vgt) (Max) 1.5 V |
| Current - Gate Trigger (Igt) (Max) 100 mA |
| Voltage - On State (Vtm) (Max) 1.5 V |
| Current - On State (It (AV)) (Max) 69 A |
| Current - On State (It (RMS)) (Max) 120 A |
| Current - Off State (Max) 10 mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) 1200A, 1340A |
| SCR Type Standard Recovery |
| Package_case TO-208AC, TO-65-3, Stud |
CS35-12IO4 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CS35-12IO4 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
CS35-12IO4 сопутствующие товары
Комментарии
IXYS
CLA5E1200UC
THYRISTOR PHASE 1200V TO-252
CS19-12HO1S
THYRISTOR PHASE 1200V TO-252
CS19-08HO1S
THYRISTOR PHASE 1200V TO-252
CS19-08HO1
THYRISTOR PHASE 1200V TO-252
CLA30E1200PC
THYRISTOR PHASE 1200V TO-252
CLA30E1200PB
THYRISTOR PHASE 1200V TO-252
CMA30E1600PB
THYRISTOR PHASE 1200V TO-252
CS19-12HO1S-TUBE
THYRISTOR PHASE 1200V TO-252
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
