Central Semiconductor Corp CPS165-CS220-35M-WN
- CPS165-CS220-35M-WN
- Central Semiconductor Corp
- SCR 35A 600V
- Thyristors - SCRs
- CPS165-CS220-35M-WN Лист данных
- Die
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3467
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number CPS165-CS220-35M-WN |
Category Thyristors - SCRs |
Manufacturer Central Semiconductor Corp |
Description SCR 35A 600V |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Current - Hold (Ih) (Max) 40 mA |
Voltage - Off State 600 V |
Voltage - Gate Trigger (Vgt) (Max) 1 V |
Current - Gate Trigger (Igt) (Max) 30 mA |
Voltage - On State (Vtm) (Max) 2.2 V |
Current - On State (It (AV)) (Max) - |
Current - On State (It (RMS)) (Max) 35 A |
Current - Off State (Max) 10 µA |
Current - Non Rep. Surge 50, 60Hz (Itsm) 350A |
SCR Type Standard Recovery |
Package_case Die |
CPS165-CS220-35M-WN Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CPS165-CS220-35M-WN ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Central Semiconductor Corp
CMLDM8005 TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMLDM5757 TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMRDM3575 TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMLDM7003TG TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMLDM8002AG TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMLDM7003G TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMLDM7002AG TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
CMLDM3737 TR PBFREE
MOSFET 2P-CH 20V 0.65A SOT563
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic