Cree/Wolfspeed CGH40006S
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- CGH40006S
- Cree/Wolfspeed
- RF MOSFET HEMT 28V 6QFN
- Transistors - FETs, MOSFETs - RF
- CGH40006S Лист данных
- 6-VDFN Exposed Pad
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4862
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number CGH40006S |
| Category Transistors - FETs, MOSFETs - RF |
| Manufacturer Cree/Wolfspeed |
| Description RF MOSFET HEMT 28V 6QFN |
| Package Cut Tape (CT) |
| Series GaN |
| Package / Case 6-VDFN Exposed Pad |
| Supplier Device Package 6-QFN-EP (3x3) |
| Frequency 0Hz ~ 6GHz |
| Gain 12dB |
| Noise Figure - |
| Power - Output 8W |
| Transistor Type HEMT |
| Voltage - Test 28 V |
| Current - Test 100 mA |
| Voltage - Rated 84 V |
| Current Rating (Amps) - |
| Package_case 6-VDFN Exposed Pad |
CGH40006S Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CGH40006S ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
CGH40006S сопутствующие товары
Комментарии
Cree/Wolfspeed
CGH09120F
RF MOSFET HEMT 28V 440095
CGH27030S
RF MOSFET HEMT 28V 440095
CGHV35060MP
RF MOSFET HEMT 28V 440095
CGHV27060MP
RF MOSFET HEMT 28V 440095
CGHV1F025S
RF MOSFET HEMT 28V 440095
CGHV96100F2
RF MOSFET HEMT 28V 440095
CGH55015F2
RF MOSFET HEMT 28V 440095
CGHV59070F
RF MOSFET HEMT 28V 440095
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
