CD1206-B220

Bourns Inc. CD1206-B220

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • CD1206-B220
  • Bourns Inc.
  • DIODE SCHOTTKY 20V 2A 1206
  • Diodes - Rectifiers - Single
  • CD1206-B220 Лист данных
  • Chip, Concave Terminals
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/CD1206-B220Lead free / RoHS Compliant
  • 3489
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
CD1206-B220
Category
Diodes - Rectifiers - Single
Manufacturer
Bourns Inc.
Description
DIODE SCHOTTKY 20V 2A 1206
Package
Cut Tape (CT)
Series
-
Mounting Type
Surface Mount
Package / Case
Chip, Concave Terminals
Supplier Device Package
1206
Diode Type
Schottky
Current - Average Rectified (Io)
2A
Voltage - Forward (Vf) (Max) @ If
500 mV @ 2 A
Current - Reverse Leakage @ Vr
500 µA @ 20 V
Capacitance @ Vr, F
-
Voltage - DC Reverse (Vr) (Max)
20 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 125°C
Package_case
Chip, Concave Terminals

CD1206-B220 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/CD1206-B220

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/CD1206-B220

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/CD1206-B220

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о CD1206-B220 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Bourns Inc.
Bourns Inc.,https://www.jinftry.ru/product_detail/CD1206-B220
CD0805-B120,https://www.jinftry.ru/product_detail/CD1206-B220
CD0805-B120

BARRIER DIODE

CD214A-F1100,https://www.jinftry.ru/product_detail/CD1206-B220
CD214A-F1100

BARRIER DIODE

CD214A-F1400,https://www.jinftry.ru/product_detail/CD1206-B220
CD214A-F1400

BARRIER DIODE

CD214A-F1600,https://www.jinftry.ru/product_detail/CD1206-B220
CD214A-F1600

BARRIER DIODE

CD1005-B0130,https://www.jinftry.ru/product_detail/CD1206-B220
CD1005-B0130

BARRIER DIODE

CD0603-B0130,https://www.jinftry.ru/product_detail/CD1206-B220
CD0603-B0130

BARRIER DIODE

CD214B-R3600,https://www.jinftry.ru/product_detail/CD1206-B220
CD214B-R3600

BARRIER DIODE

CD1005-Z27,https://www.jinftry.ru/product_detail/CD1206-B220
CD1005-Z27

BARRIER DIODE

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP