C4H2350N05

Ampleon USA Inc. C4H2350N05

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • C4H2350N05
  • Ampleon USA Inc.
  • C4H2350N05/DFN-4.5X4-6-1/REELDP
  • Transistors - FETs, MOSFETs - RF
  • C4H2350N05 Лист данных
  • 6-VDFN Exposed Pad
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/C4H2350N05Lead free / RoHS Compliant
  • 3958
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
C4H2350N05
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon USA Inc.
Description
C4H2350N05/DFN-4.5X4-6-1/REELDP
Package
Cut Tape (CT)
Series
-
Package / Case
6-VDFN Exposed Pad
Supplier Device Package
6-DFN (4.5x4)
Frequency
2.6GHz ~ 5GHz
Gain
4.6dB
Noise Figure
-
Power - Output
1.3W
Transistor Type
N-Channel
Voltage - Test
48 V
Current - Test
10 mA
Voltage - Rated
150 V
Current Rating (Amps)
-
Package_case
6-VDFN Exposed Pad

C4H2350N05 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/C4H2350N05

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/C4H2350N05

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/C4H2350N05

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о C4H2350N05 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Ampleon USA Inc.

BLM9D0708-05AMZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLM9D0708-05AMZ

BLM9D0708-05AM/LGA7X7/REELDP

BLM9D1920-08AMZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLM9D1920-08AMZ

BLM9D0708-05AM/LGA7X7/REELDP

BLM9D2324-08AMZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLM9D2324-08AMZ

BLM9D0708-05AM/LGA7X7/REELDP

BLM9D1819-08AMZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLM9D1819-08AMZ

BLM9D0708-05AM/LGA7X7/REELDP

BLM9D2527-09AMZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLM9D2527-09AMZ

BLM9D0708-05AM/LGA7X7/REELDP

BLP9LA25SZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLP9LA25SZ

BLM9D0708-05AM/LGA7X7/REELDP

BLP9LA25SGZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLP9LA25SGZ

BLM9D0708-05AM/LGA7X7/REELDP

BLM9D3437-12AMZ,https://www.jinftry.ru/product_detail/C4H2350N05
BLM9D3437-12AMZ

BLM9D0708-05AM/LGA7X7/REELDP

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP