Nexperia USA Inc. BZX84W-C3V3F
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BZX84W-C3V3F
- Nexperia USA Inc.
- DIODE ZENER 3.3V 275MW SOT323
- Diodes - Zener - Single
- BZX84W-C3V3F Лист данных
- SC-70, SOT-323
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4429
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BZX84W-C3V3F |
| Category Diodes - Zener - Single |
| Manufacturer Nexperia USA Inc. |
| Description DIODE ZENER 3.3V 275MW SOT323 |
| Package Tape & Reel (TR) |
| Series Automotive, AEC-Q101 |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SC-70, SOT-323 |
| Supplier Device Package SOT-323 |
| Tolerance ±5% |
| Power - Max 275 mW |
| Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
| Current - Reverse Leakage @ Vr 5 µA @ 1 V |
| Voltage - Zener (Nom) (Vz) 3.3 V |
| Impedance (Max) (Zzt) 95 Ohms |
| Package_case SC-70, SOT-323 |
BZX84W-C3V3F Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX84W-C3V3F ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BZX84W-C3V3F сопутствующие товары
Комментарии
Nexperia USA Inc.
BZX84W-C12F
DIODE ZENER 12V 275MW SOT323
BZX84W-C9V1F
DIODE ZENER 12V 275MW SOT323
BZX84W-C7V5X
DIODE ZENER 12V 275MW SOT323
BZX84W-C30X
DIODE ZENER 12V 275MW SOT323
BZX84W-C62X
DIODE ZENER 12V 275MW SOT323
BZX84W-C4V3X
DIODE ZENER 12V 275MW SOT323
BZX84W-C6V8F
DIODE ZENER 12V 275MW SOT323
BZX84W-C10X
DIODE ZENER 12V 275MW SOT323
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Nexperia Releases Wafer Level 12 and 30V MOSFETs with Market Leading Efficiency
Nexperia Releases Wafer Level 12 and 30V MOSFETs with Market Leading Efficiency
Source: Contributed by the manufacturer • Author: Nexperia • 2022-07-27 10:14 • 294 reads • 0 comments
Three new devices in DSN1006 and DSN1010 can save power and simplify heat management in space constrained applications
Nijmegen, July 27, 2022: Nexperia, a high-capacity production expert in the field of basic semiconductor devices, today announced the launch of PMCB60XN and PMCB60XNE 30V N-channel small signal T
Nexperia Introduces New Level Shifter NXT4557GU
Nexperia Introduces New Level Shifter NXT4557GU
Low operating and shutdown currents help maximize phone battery life
Nexperia, a specialist in basic semiconductor devices, today announced the launch of new additions to its family of level translators: the NXT4557GU and NXT4556UP. The new device enables seamless connectivity between next-generation low-voltage mobile phone baseband processors and Subscriber Identity Module (SIM) cards. As processor geometries move toward the single-digit na
