Taiwan Semiconductor Corporation BZX84C11 RFG
- BZX84C11 RFG
- Taiwan Semiconductor Corporation
- DIODE ZENER 11V 300MW SOT23
- Diodes - Zener - Single
- BZX84C11 RFG Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3480
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BZX84C11 RFG |
Category Diodes - Zener - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description DIODE ZENER 11V 300MW SOT23 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -65°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23 |
Tolerance ±5% |
Power - Max 300 mW |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 100 nA @ 8 V |
Voltage - Zener (Nom) (Vz) 11 V |
Impedance (Max) (Zzt) 20 Ohms |
Package_case TO-236-3, SC-59, SOT-23-3 |
BZX84C11 RFG Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX84C11 RFG ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Taiwan Semiconductor Corporation
BZX84C9V1 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C8V2 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C7V5 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C6V8 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C6V2 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C5V6 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C5V1 RFG
DIODE ZENER 9.1V 300MW SOT23
BZX84C4V7 RFG
DIODE ZENER 9.1V 300MW SOT23
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.