Nexperia USA Inc. BZX84-A15,215
- BZX84-A15,215
- Nexperia USA Inc.
- DIODE ZENER 15V 250MW TO236AB
- Diodes - Zener - Single
- BZX84-A15,215 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 16914
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BZX84-A15,215 |
Category Diodes - Zener - Single |
Manufacturer Nexperia USA Inc. |
Description DIODE ZENER 15V 250MW TO236AB |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101 |
Operating Temperature -65°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package TO-236AB |
Tolerance ±1% |
Power - Max 250 mW |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 50 nA @ 10.5 V |
Voltage - Zener (Nom) (Vz) 15 V |
Impedance (Max) (Zzt) 30 Ohms |
Package_case TO-236-3, SC-59, SOT-23-3 |
BZX84-A15,215 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX84-A15,215 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
PDZ13BGWJ
DIODE ZENER 13V 365MW SOD123
PDZ12BGWJ
DIODE ZENER 13V 365MW SOD123
PDZ11BGWJ
DIODE ZENER 13V 365MW SOD123
PDZ10BGWJ
DIODE ZENER 13V 365MW SOD123
PDZ12BF
DIODE ZENER 13V 365MW SOD123
PDZ9.1BGWJ
DIODE ZENER 13V 365MW SOD123
PDZ8.2BGWJ
DIODE ZENER 13V 365MW SOD123
PDZ7.5BGWJ
DIODE ZENER 13V 365MW SOD123
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.