Nexperia USA Inc. BZX79-C6V2,133
- BZX79-C6V2,133
- Nexperia USA Inc.
- DIODE ZENER 6.2V 400MW ALF2
- Diodes - Zener - Single
- BZX79-C6V2,133 Лист данных
- DO-204AH, DO-35, Axial
- Tape & Box (TB)
- Lead free / RoHS Compliant
- 4234
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BZX79-C6V2,133 |
Category Diodes - Zener - Single |
Manufacturer Nexperia USA Inc. |
Description DIODE ZENER 6.2V 400MW ALF2 |
Package Tape & Box (TB) |
Series - |
Operating Temperature -65°C ~ 200°C |
Mounting Type Through Hole |
Package / Case DO-204AH, DO-35, Axial |
Supplier Device Package ALF2 |
Tolerance ±5% |
Power - Max 400 mW |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 3 µA @ 4 V |
Voltage - Zener (Nom) (Vz) 6.2 V |
Impedance (Max) (Zzt) 10 Ohms |
Package_case DO-204AH, DO-35, Axial |
BZX79-C6V2,133 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX79-C6V2,133 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BZX79-C15,113
DIODE ZENER 15V 400MW ALF2
BZX79-C15,133
DIODE ZENER 15V 400MW ALF2
BZX79-C5V6,133
DIODE ZENER 15V 400MW ALF2
BZX79-C5V6,113
DIODE ZENER 15V 400MW ALF2
BZX79-C9V1,143
DIODE ZENER 15V 400MW ALF2
BZX79-C9V1,113
DIODE ZENER 15V 400MW ALF2
BZX79-C9V1,133
DIODE ZENER 15V 400MW ALF2
BZX79-C3V3,143
DIODE ZENER 15V 400MW ALF2
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Nexperia Introduces New Level Shifter NXT4557GU
Nexperia Introduces New Level Shifter NXT4557GU
Low operating and shutdown currents help maximize phone battery life
Nexperia, a specialist in basic semiconductor devices, today announced the launch of new additions to its family of level translators: the NXT4557GU and NXT4556UP. The new device enables seamless connectivity between next-generation low-voltage mobile phone baseband processors and Subscriber Identity Module (SIM) cards. As processor geometries move toward the single-digit na