Nexperia USA Inc. BZX79-B51,113
- BZX79-B51,113
- Nexperia USA Inc.
- DIODE ZENER 51V 400MW ALF2
- Diodes - Zener - Single
- BZX79-B51,113 Лист данных
- DO-204AH, DO-35, Axial
- Bulk
- Lead free / RoHS Compliant
- 29853
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BZX79-B51,113 |
Category Diodes - Zener - Single |
Manufacturer Nexperia USA Inc. |
Description DIODE ZENER 51V 400MW ALF2 |
Package Bulk |
Series - |
Operating Temperature -65°C ~ 200°C |
Mounting Type Through Hole |
Package / Case DO-204AH, DO-35, Axial |
Supplier Device Package ALF2 |
Tolerance ±2% |
Power - Max 400 mW |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 50 nA @ 35.7 V |
Voltage - Zener (Nom) (Vz) 51 V |
Impedance (Max) (Zzt) 180 Ohms |
Package_case DO-204AH, DO-35, Axial |
BZX79-B51,113 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX79-B51,113 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BZX79-B47,113
DIODE ZENER 47V 400MW ALF2
BZX79-B43,113
DIODE ZENER 47V 400MW ALF2
BZX79-B3V9,113
DIODE ZENER 47V 400MW ALF2
BZX79-B3V3,113
DIODE ZENER 47V 400MW ALF2
BZX79-B3V0,113
DIODE ZENER 47V 400MW ALF2
BZX79-B39,113
DIODE ZENER 47V 400MW ALF2
BZX79-B36,113
DIODE ZENER 47V 400MW ALF2
BZX79-B30,113
DIODE ZENER 47V 400MW ALF2
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Nexperia Introduces New Level Shifter NXT4557GU
Nexperia Introduces New Level Shifter NXT4557GU
Low operating and shutdown currents help maximize phone battery life
Nexperia, a specialist in basic semiconductor devices, today announced the launch of new additions to its family of level translators: the NXT4557GU and NXT4556UP. The new device enables seamless connectivity between next-generation low-voltage mobile phone baseband processors and Subscriber Identity Module (SIM) cards. As processor geometries move toward the single-digit na
Nexperia BC856xQC-Q PNP
Nexperia BC856xQC-Q PNP
Nexperia BC856xQC-Q PNP transistors are 65V 100mA transistors ideal for general purpose switching and amplification. The BC856xQC-Q transistors feature high power dissipation, excellent thermal performance, and strong solder joints. The low operating temperature of these devices improves the overall reliability of the system
Nexperia BC856xQC-Q PNP transistors are available in a 1.4mm x 1.2mm x 0.48mm DFN1412D-3 (SOT8009) package. The side wettable flanks (SWFs) of th