Nexperia USA Inc. BZX79-B36,143
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BZX79-B36,143
- Nexperia USA Inc.
- DIODE ZENER 36V 400MW ALF2
- Diodes - Zener - Single
- BZX79-B36,143 Лист данных
- DO-204AH, DO-35, Axial
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 1273
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BZX79-B36,143 |
| Category Diodes - Zener - Single |
| Manufacturer Nexperia USA Inc. |
| Description DIODE ZENER 36V 400MW ALF2 |
| Package Jinftry-Reel® |
| Series - |
| Operating Temperature -65°C ~ 200°C |
| Mounting Type Through Hole |
| Package / Case DO-204AH, DO-35, Axial |
| Supplier Device Package ALF2 |
| Tolerance ±2% |
| Power - Max 400 mW |
| Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
| Current - Reverse Leakage @ Vr 50 nA @ 25.2 V |
| Voltage - Zener (Nom) (Vz) 36 V |
| Impedance (Max) (Zzt) 90 Ohms |
| Package_case DO-204AH, DO-35, Axial |
BZX79-B36,143 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX79-B36,143 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BZX79-B36,143 сопутствующие товары
Комментарии
Nexperia USA Inc.
BZX79-B24,143
DIODE ZENER 24V 400MW ALF2
BZX79-B22,143
DIODE ZENER 24V 400MW ALF2
BZX79-B18,143
DIODE ZENER 24V 400MW ALF2
BZX384-B68Z
DIODE ZENER 24V 400MW ALF2
BZX384-B62Z
DIODE ZENER 24V 400MW ALF2
BZX384-B56Z
DIODE ZENER 24V 400MW ALF2
BZX384-B15Z
DIODE ZENER 24V 400MW ALF2
BZX79-B8V2,143
DIODE ZENER 24V 400MW ALF2
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
