Vishay Semiconductor - Diodes Division BZX384C3V0-E3-08
- BZX384C3V0-E3-08
- Vishay Semiconductor - Diodes Division
- DIODE ZENER 3V 200MW SOD323
- Diodes - Zener - Single
- BZX384C3V0-E3-08 Лист данных
- SC-76, SOD-323
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1090
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BZX384C3V0-E3-08 |
Category Diodes - Zener - Single |
Manufacturer Vishay Semiconductor - Diodes Division |
Description DIODE ZENER 3V 200MW SOD323 |
Package Tape & Reel (TR) |
Series BZX384 |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case SC-76, SOD-323 |
Supplier Device Package SOD-323 |
Tolerance ±5% |
Power - Max 200 mW |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 10 µA @ 1 V |
Voltage - Zener (Nom) (Vz) 3 V |
Impedance (Max) (Zzt) 95 Ohms |
Package_case SC-76, SOD-323 |
BZX384C3V0-E3-08 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX384C3V0-E3-08 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
BZX384C36-E3-08
DIODE ZENER 36V 200MW SOD323
BZX384C33-E3-08
DIODE ZENER 36V 200MW SOD323
BZX384C30-E3-08
DIODE ZENER 36V 200MW SOD323
BZX384C2V7-E3-08
DIODE ZENER 36V 200MW SOD323
BZX384C2V4-E3-08
DIODE ZENER 36V 200MW SOD323
MMBZ4622-E3-08
DIODE ZENER 36V 200MW SOD323
MMBZ4619-E3-08
DIODE ZENER 36V 200MW SOD323
MMBZ4618-E3-08
DIODE ZENER 36V 200MW SOD323
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: