Vishay Semiconductor - Diodes Division BZX384B3V9-G3-18
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BZX384B3V9-G3-18
- Vishay Semiconductor - Diodes Division
- DIODE ZENER 3.9V 200MW SOD323
- Diodes - Zener - Single
- BZX384B3V9-G3-18 Лист данных
- SC-76, SOD-323
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 1731
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BZX384B3V9-G3-18 |
| Category Diodes - Zener - Single |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description DIODE ZENER 3.9V 200MW SOD323 |
| Package Tape & Reel (TR) |
| Series BZX384-G |
| Operating Temperature -55°C ~ 150°C |
| Mounting Type Surface Mount |
| Package / Case SC-76, SOD-323 |
| Supplier Device Package SOD-323 |
| Tolerance ±2% |
| Power - Max 200 mW |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr 3 µA @ 1 V |
| Voltage - Zener (Nom) (Vz) 3.9 V |
| Impedance (Max) (Zzt) 90 Ohms |
| Package_case SC-76, SOD-323 |
BZX384B3V9-G3-18 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX384B3V9-G3-18 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BZX384B3V9-G3-18 сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
BZX384B3V3-G3-18
DIODE ZENER 3.3V 200MW SOD323
BZX384B24-G3-08
DIODE ZENER 3.3V 200MW SOD323
BZX384B22-G3-08
DIODE ZENER 3.3V 200MW SOD323
BZX384B20-G3-08
DIODE ZENER 3.3V 200MW SOD323
BZX384B18-G3-08
DIODE ZENER 3.3V 200MW SOD323
BZX384B16-G3-08
DIODE ZENER 3.3V 200MW SOD323
BZX384B15-G3-08
DIODE ZENER 3.3V 200MW SOD323
BZX384B13-G3-08
DIODE ZENER 3.3V 200MW SOD323
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
