NXP USA Inc. BZX284-B10,115
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BZX284-B10,115
- NXP USA Inc.
- DIODE ZENER 10V 400MW SOD110
- Diodes - Zener - Single
- BZX284-B10,115 Лист данных
- SOD-110
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4697
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BZX284-B10,115 |
| Category Diodes - Zener - Single |
| Manufacturer NXP USA Inc. |
| Description DIODE ZENER 10V 400MW SOD110 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -65°C ~ 150°C |
| Mounting Type Surface Mount |
| Package / Case SOD-110 |
| Supplier Device Package SOD-110 |
| Tolerance ±2% |
| Power - Max 400 mW |
| Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA |
| Current - Reverse Leakage @ Vr 200 nA @ 7 V |
| Voltage - Zener (Nom) (Vz) 10 V |
| Impedance (Max) (Zzt) 10 Ohms |
| Package_case SOD-110 |
BZX284-B10,115 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZX284-B10,115 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BZX284-B10,115 сопутствующие товары
Комментарии
NXP USA Inc.
BZX284-C11,115
DIODE ZENER 11V 400MW SOD110
BZX284-B9V1,115
DIODE ZENER 11V 400MW SOD110
BZX284-B8V2,115
DIODE ZENER 11V 400MW SOD110
BZX284-B8V2,135
DIODE ZENER 11V 400MW SOD110
BZX284-B7V5,115
DIODE ZENER 11V 400MW SOD110
BZX284-B75,115
DIODE ZENER 11V 400MW SOD110
BZX284-B6V8,115
DIODE ZENER 11V 400MW SOD110
BZX284-B6V2,115
DIODE ZENER 11V 400MW SOD110
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
NXP Provides Highly Integrated Converged eSIM Solution for Xiaomi Redmi Note 10T
NXP Provides Highly Integrated Converged eSIM Solution for Xiaomi Redmi Note 10T
Shanghai, China – May 10, 2022 – NXP Semiconductors N.V. announced that the Xiaomi Redmi Note 10T smartphone features NXP’s SN110 converged eSIM solution. The SN110 series is a highly integrated converged eSIM solution that provides GSMA certified eSIM functionality for consumer electronics for cellular connectivity, secure mobile bus ticketing, mobile payments with integrated NFC and embedded secure element an
