BZV55B6V8 L1G

Taiwan Semiconductor Corporation BZV55B6V8 L1G

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BZV55B6V8 L1G
  • Taiwan Semiconductor Corporation
  • DIODE ZENER 6.8V 500MW MINI MELF
  • Diodes - Zener - Single
  • BZV55B6V8 L1G Лист данных
  • DO-213AC, MINI-MELF, SOD-80
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BZV55B6V8-L1GLead free / RoHS Compliant
  • 19584
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BZV55B6V8 L1G
Category
Diodes - Zener - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
DIODE ZENER 6.8V 500MW MINI MELF
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
DO-213AC, MINI-MELF, SOD-80
Supplier Device Package
Mini MELF
Tolerance
±2%
Power - Max
500 mW
Voltage - Forward (Vf) (Max) @ If
1 V @ 100 mA
Current - Reverse Leakage @ Vr
100 nA @ 3 V
Voltage - Zener (Nom) (Vz)
6.8 V
Impedance (Max) (Zzt)
8 Ohms
Package_case
DO-213AC, MINI-MELF, SOD-80

BZV55B6V8 L1G Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BZV55B6V8 L1G ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Taiwan Semiconductor Corporation

BZV55B68 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B68 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B62 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B62 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B5V6 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B5V6 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B5V1 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B5V1 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B56 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B56 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B51 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B51 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B4V7 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B4V7 L1G

DIODE ZENER 68V 500MW MINI MELF

BZV55B4V3 L1G,https://www.jinftry.ru/product_detail/BZV55B6V8-L1G
BZV55B4V3 L1G

DIODE ZENER 68V 500MW MINI MELF

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP