Vishay Semiconductor - Diodes Division BZT52B4V7-G3-18
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BZT52B4V7-G3-18
- Vishay Semiconductor - Diodes Division
- DIODE ZENER 4.7V 410MW SOD123
- Diodes - Zener - Single
- BZT52B4V7-G3-18 Лист данных
- SOD-123
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 13660
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BZT52B4V7-G3-18 |
| Category Diodes - Zener - Single |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description DIODE ZENER 4.7V 410MW SOD123 |
| Package Tape & Reel (TR) |
| Series BTZ52-G |
| Operating Temperature -55°C ~ 150°C |
| Mounting Type Surface Mount |
| Package / Case SOD-123 |
| Supplier Device Package SOD-123 |
| Tolerance ±2% |
| Power - Max 410 mW |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr - |
| Voltage - Zener (Nom) (Vz) 4.7 V |
| Impedance (Max) (Zzt) 70 Ohms |
| Package_case SOD-123 |
BZT52B4V7-G3-18 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BZT52B4V7-G3-18 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BZT52B4V7-G3-18 сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
BZT52B43-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B39-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B36-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B33-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B30-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B27-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B24-G3-18
DIODE ZENER 43V 410MW SOD123
BZT52B22-G3-18
DIODE ZENER 43V 410MW SOD123
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
