BZT52B33-G3-08

Vishay Semiconductor - Diodes Division BZT52B33-G3-08

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BZT52B33-G3-08
  • Vishay Semiconductor - Diodes Division
  • DIODE ZENER 33V 410MW SOD123
  • Diodes - Zener - Single
  • BZT52B33-G3-08 Лист данных
  • SOD-123
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BZT52B33-G3-08Lead free / RoHS Compliant
  • 29599
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BZT52B33-G3-08
Category
Diodes - Zener - Single
Manufacturer
Vishay Semiconductor - Diodes Division
Description
DIODE ZENER 33V 410MW SOD123
Package
Tape & Reel (TR)
Series
BTZ52-G
Operating Temperature
-55°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
SOD-123
Supplier Device Package
SOD-123
Tolerance
±2%
Power - Max
410 mW
Voltage - Forward (Vf) (Max) @ If
-
Current - Reverse Leakage @ Vr
100 nA @ 25 V
Voltage - Zener (Nom) (Vz)
33 V
Impedance (Max) (Zzt)
40 Ohms
Package_case
SOD-123

BZT52B33-G3-08 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BZT52B33-G3-08

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BZT52B33-G3-08

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BZT52B33-G3-08

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BZT52B33-G3-08 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B27-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B27-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B24-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B24-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B22-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B22-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B20-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B20-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B18-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B18-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B16-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B16-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B15-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B15-G3-08

DIODE ZENER 27V 410MW SOD123

BZT52B13-G3-08,https://www.jinftry.ru/product_detail/BZT52B33-G3-08
BZT52B13-G3-08

DIODE ZENER 27V 410MW SOD123

What is transistor?

What is transistor? What types of transistors in the market? Function and properties of a transistor Working principle of transistor Transistor vs IC amplify What’s a transistor used for? Trend of transistors

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP