BUXD87T4

STMicroelectronics BUXD87T4

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BUXD87T4
  • STMicroelectronics
  • TRANS NPN 450V 0.5A DPAK
  • Transistors - Bipolar (BJT) - Single
  • BUXD87T4 Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BUXD87T4Lead free / RoHS Compliant
  • 1497
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BUXD87T4
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
STMicroelectronics
Description
TRANS NPN 450V 0.5A DPAK
Package
Tube
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Power - Max
20 W
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
450 V
Vce Saturation (Max) @ Ib, Ic
1V @ 20mA, 200mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
12 @ 40mA, 5V
Frequency - Transition
20MHz
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

BUXD87T4 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BUXD87T4

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BUXD87T4

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BUXD87T4

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BUXD87T4 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

STMicroelectronics
STMicroelectronics,https://www.jinftry.ru/product_detail/BUXD87T4
BD140-16,https://www.jinftry.ru/product_detail/BUXD87T4
BD140-16

TRANS PNP 80V 1.5A SOT-32

STT13005D-K,https://www.jinftry.ru/product_detail/BUXD87T4
STT13005D-K

TRANS PNP 80V 1.5A SOT-32

BD681,https://www.jinftry.ru/product_detail/BUXD87T4
BD681

TRANS PNP 80V 1.5A SOT-32

TIP105,https://www.jinftry.ru/product_detail/BUXD87T4
TIP105

TRANS PNP 80V 1.5A SOT-32

BULD118D-1,https://www.jinftry.ru/product_detail/BUXD87T4
BULD118D-1

TRANS PNP 80V 1.5A SOT-32

STX13005,https://www.jinftry.ru/product_detail/BUXD87T4
STX13005

TRANS PNP 80V 1.5A SOT-32

BUL38D,https://www.jinftry.ru/product_detail/BUXD87T4
BUL38D

TRANS PNP 80V 1.5A SOT-32

BUL39D,https://www.jinftry.ru/product_detail/BUXD87T4
BUL39D

TRANS PNP 80V 1.5A SOT-32

What Are Transistors and How Do They Work?

What is the definition of transistors? What is the structure of a transistor? How does a transistor work? Classifications of a transistor What are the functions of transistors? Amplification function principle What are transistors used for? Relevant data and statistics of transistors for reference

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

STM STP80N450K6 800V N-channel power MOSFET

STM STP80N450K6 800V N-channel power MOSFET STM STP80N450K6 800V N-channel power MOSFET is a very high voltage N-channel power MOSFET designed using the ultimate MDmesh K6 technology. This technology is based on STM's 20 years of experience in super junction technology. For applications requiring high power density and high efficiency, the result is that the on resistance and gate charge per area are best in the same class. features Excellent RDS (on) x region Excellent FOM (quality factor)
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP