NXP USA Inc. BUK9M6R6-30EX
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BUK9M6R6-30EX
- NXP USA Inc.
- BUK9M6R6-30E - N-CHANNEL 30V, LO
- Transistors - FETs, MOSFETs - Single
- BUK9M6R6-30EX Лист данных
- SOT-1210, 8-LFPAK33 (5-Lead)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2764
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BUK9M6R6-30EX |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer NXP USA Inc. |
| Description BUK9M6R6-30E - N-CHANNEL 30V, LO |
| Package Cut Tape (CT) |
| Series Automotive, AEC-Q101, TrenchMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SOT-1210, 8-LFPAK33 (5-Lead) |
| Supplier Device Package LFPAK33 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 75W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 70A (Tc) |
| Rds On (Max) @ Id, Vgs 5.3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 2.001 pF @ 25 V |
| Vgs (Max) ±10V |
| Drive Voltage (Max Rds On, Min Rds On) 5V |
| Package_case SOT-1210, 8-LFPAK33 (5-Lead) |
BUK9M6R6-30EX Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BUK9M6R6-30EX ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BUK9M6R6-30EX сопутствующие товары
Комментарии
NXP USA Inc.
BUK6217-55C,118
MOSFET N-CH 55V 44A DPAK
BUK6212-40C,118
MOSFET N-CH 55V 44A DPAK
BUK9Y12-55B,115
MOSFET N-CH 55V 44A DPAK
BUK9219-55A,118
MOSFET N-CH 55V 44A DPAK
BUK7Y9R9-80EX
MOSFET N-CH 55V 44A DPAK
BUK765R3-40E,118
MOSFET N-CH 55V 44A DPAK
BUK969R0-60E,118
MOSFET N-CH 55V 44A DPAK
BUK768R1-100E,118
MOSFET N-CH 55V 44A DPAK
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
