BSS63AHZGT116

Rohm Semiconductor BSS63AHZGT116

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BSS63AHZGT116
  • Rohm Semiconductor
  • BSS63AHZG IS A SOT-23 PACKAGE TR
  • Transistors - Bipolar (BJT) - Single
  • BSS63AHZGT116 Лист данных
  • TO-236-3, SC-59, SOT-23-3
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BSS63AHZGT116Lead free / RoHS Compliant
  • 4273
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BSS63AHZGT116
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Rohm Semiconductor
Description
BSS63AHZG IS A SOT-23 PACKAGE TR
Package
Jinftry-Reel®
Series
Automotive, AEC-Q101
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SST3
Power - Max
200 mW
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA, 1V
Frequency - Transition
200MHz
Package_case
TO-236-3, SC-59, SOT-23-3

BSS63AHZGT116 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BSS63AHZGT116

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BSS63AHZGT116

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BSS63AHZGT116

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BSS63AHZGT116 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Rohm Semiconductor
Rohm Semiconductor,https://www.jinftry.ru/product_detail/BSS63AHZGT116
BSS4130AT116,https://www.jinftry.ru/product_detail/BSS63AHZGT116
BSS4130AT116

TRANS 100V 100A SOT-23

2SAR553PFRAT100,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SAR553PFRAT100

TRANS 100V 100A SOT-23

2SAR293PFRAT100,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SAR293PFRAT100

TRANS 100V 100A SOT-23

2SD2656FRAT106,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SD2656FRAT106

TRANS 100V 100A SOT-23

2SCR513PFRAT100,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SCR513PFRAT100

TRANS 100V 100A SOT-23

2SAR544PFRAT100,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SAR544PFRAT100

TRANS 100V 100A SOT-23

2SCR533PFRAT100,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SCR533PFRAT100

TRANS 100V 100A SOT-23

2SAR514PFRAT100,https://www.jinftry.ru/product_detail/BSS63AHZGT116
2SAR514PFRAT100

TRANS 100V 100A SOT-23

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

Model BC547/2N2222/2N4401 can replace 2N3904 transistor

Model BC547/2N2222/2N4401 can replace 2N3904 transistor   2N3904 is a commonly used NPN bipolar transistor (2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP