Rohm Semiconductor BSM300C12P3E301
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- BSM300C12P3E301
- Rohm Semiconductor
- SICFET N-CH 1200V 300A MODULE
- Transistors - FETs, MOSFETs - Single
- BSM300C12P3E301 Лист данных
- Module
- Bulk
-
Lead free / RoHS Compliant - 26812
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number BSM300C12P3E301 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description SICFET N-CH 1200V 300A MODULE |
| Package Bulk |
| Series - |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type - |
| Package / Case Module |
| Supplier Device Package Module |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 1360W (Tc) |
| FET Type N-Channel |
| FET Feature Standard |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 300A (Tc) |
| Rds On (Max) @ Id, Vgs - |
| Vgs(th) (Max) @ Id 5.6V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs - |
| Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 10 V |
| Vgs (Max) +22V, -4V |
| Drive Voltage (Max Rds On, Min Rds On) - |
| Package_case Module |
BSM300C12P3E301 Гарантии
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