Infineon Technologies BSM25GP120B2BOSA1
- BSM25GP120B2BOSA1
- Infineon Technologies
- IGBT MODULE 1200V
- Transistors - IGBTs - Modules
- BSM25GP120B2BOSA1 Лист данных
- Module
- Tray
- Lead free / RoHS Compliant
- 1096
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BSM25GP120B2BOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MODULE 1200V |
Package Tray |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 230 W |
Configuration Full Bridge |
Current - Collector (Ic) (Max) 45 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 500 µA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 25A |
Input Capacitance (Cies) @ Vce 1.5 nF @ 25 V |
Input Three Phase Bridge Rectifier |
NTC Thermistor Yes |
Package_case Module |
BSM25GP120B2BOSA1 Гарантии
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