Infineon Technologies BSM200GA120DN2HOSA1
- BSM200GA120DN2HOSA1
- Infineon Technologies
- IGBT MOD 1200V 300A 1550W
- Transistors - IGBTs - Modules
- BSM200GA120DN2HOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 1221
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BSM200GA120DN2HOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1200V 300A 1550W |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 1550 W |
Configuration Single Switch |
Current - Collector (Ic) (Max) 300 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 4 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 200A |
Input Capacitance (Cies) @ Vce 13 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
BSM200GA120DN2HOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BSM200GA120DN2HOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
BSM50GD120DN2E3226BOSA1
IGBT MOD 1200V 50A 350W
BSM100GB120DLCHOSA1
IGBT MOD 1200V 50A 350W
FS150R07PE4BOSA1
IGBT MOD 1200V 50A 350W
FF300R12ME3BOSA1
IGBT MOD 1200V 50A 350W
FS100R12PT4BOSA1
IGBT MOD 1200V 50A 350W
FF300R12ME4PB11BPSA1
IGBT MOD 1200V 50A 350W
FF300R12ME4PBOSA1
IGBT MOD 1200V 50A 350W
FZ400R12KS4PHOSA1
IGBT MOD 1200V 50A 350W
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic