Infineon Technologies BSM100GB120DN2K
- BSM100GB120DN2K
- Infineon Technologies
- INSULATED GATE BIPOLAR TRANSISTO
- Transistors - IGBTs - Single
- BSM100GB120DN2K Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 1834
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BSM100GB120DN2K |
Category Transistors - IGBTs - Single |
Manufacturer Infineon Technologies |
Description INSULATED GATE BIPOLAR TRANSISTO |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Input Type - |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic - |
Gate Charge - |
Td (on/off) @ 25°C - |
Test Condition - |
Current - Collector Pulsed (Icm) - |
Switching Energy - |
Package_case - |
BSM100GB120DN2K Гарантии
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