Infineon Technologies BSC110N06NS3GATMA1
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- BSC110N06NS3GATMA1
- Infineon Technologies
- MOSFET N-CH 60V 50A TDSON-8
- Transistors - FETs, MOSFETs - Single
- BSC110N06NS3GATMA1 Лист данных
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2242
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number BSC110N06NS3GATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 60V 50A TDSON-8 |
| Package Cut Tape (CT) |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PG-TDSON-8-5 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta), 50W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
| Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 4V @ 23µA |
| Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerTDFN |
BSC110N06NS3GATMA1 Гарантии
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