Infineon Technologies BSC009NE2LSATMA1
- BSC009NE2LSATMA1
- Infineon Technologies
- MOSFET N-CH 25V 41A/100A TDSON
- Transistors - FETs, MOSFETs - Single
- BSC009NE2LSATMA1 Лист данных
- 8-PowerTDFN
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 2548
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BSC009NE2LSATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 25V 41A/100A TDSON |
Package Jinftry-Reel® |
Series OptiMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8-7 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 96W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 25 V |
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc) |
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 12 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerTDFN |
BSC009NE2LSATMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BSC009NE2LSATMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
BSC016N04LSGATMA1
MOSFET N-CH 40V 31A/100A TDSON
IAUC100N10S5N040ATMA1
MOSFET N-CH 40V 31A/100A TDSON
BSB044N08NN3GXUMA1
MOSFET N-CH 40V 31A/100A TDSON
SPP06N80C3XKSA1
MOSFET N-CH 40V 31A/100A TDSON
SPB11N60C3ATMA1
MOSFET N-CH 40V 31A/100A TDSON
IPP60R190P6XKSA1
MOSFET N-CH 40V 31A/100A TDSON
IPP600N25N3GXKSA1
MOSFET N-CH 40V 31A/100A TDSON
IPP320N20N3GXKSA1
MOSFET N-CH 40V 31A/100A TDSON
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
Infineon High Power Density SiC MOSFET
Infineon High Power Density SiC MOSFETs
New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1.
Next, we will introduce another device from Infi