BLL1214-250

Rochester Electronics, LLC BLL1214-250

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BLL1214-250
  • Rochester Electronics, LLC
  • BLL1214-250 - HF/VHF POWER TRANS
  • Transistors - FETs, MOSFETs - RF
  • BLL1214-250 Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300Lead free / RoHS Compliant
  • 4149
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BLL1214-250
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Rochester Electronics, LLC
Description
BLL1214-250 - HF/VHF POWER TRANS
Package
Bulk
Series
-
Package / Case
-
Supplier Device Package
-
Frequency
-
Gain
-
Noise Figure
-
Power - Output
-
Transistor Type
-
Voltage - Test
-
Current - Test
-
Voltage - Rated
-
Current Rating (Amps)
-
Package_case
-

BLL1214-250 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BLL1214-250 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Rochester Electronics, LLC

CLF1G0035-200P,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
CLF1G0035-200P

CLF1G0035-200 - 200W BROADBAND R

BLF175,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
BLF175

CLF1G0035-200 - 200W BROADBAND R

BLL1214-35,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
BLL1214-35

CLF1G0035-200 - 200W BROADBAND R

BLF3G21-30,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
BLF3G21-30

CLF1G0035-200 - 200W BROADBAND R

CA3083Z-G,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
CA3083Z-G

CLF1G0035-200 - 200W BROADBAND R

CA3146AE,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
CA3146AE

CLF1G0035-200 - 200W BROADBAND R

CA3045,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
CA3045

CLF1G0035-200 - 200W BROADBAND R

CA3081F,https://www.jinftry.ru/product_detail/BLL1214-250-P4801300
CA3081F

CLF1G0035-200 - 200W BROADBAND R

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP