BLC9G20LS-361AVTY

Ampleon USA Inc. BLC9G20LS-361AVTY

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BLC9G20LS-361AVTY
  • Ampleon USA Inc.
  • RF FET LDMOS 65V 15.7DB SOT12583
  • Transistors - FETs, MOSFETs - RF
  • BLC9G20LS-361AVTY Лист данных
  • SOT-1258-3
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTYLead free / RoHS Compliant
  • 777
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BLC9G20LS-361AVTY
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon USA Inc.
Description
RF FET LDMOS 65V 15.7DB SOT12583
Package
Tape & Reel (TR)
Series
-
Package / Case
SOT-1258-3
Supplier Device Package
DFM6
Frequency
1.81GHz ~ 1.88GHz
Gain
15.7dB
Noise Figure
0.6dB
Power - Output
360W
Transistor Type
LDMOS (Dual), Common Source
Voltage - Test
28 V
Current - Test
300 mA
Voltage - Rated
65 V
Current Rating (Amps)
-
Package_case
SOT-1258-3

BLC9G20LS-361AVTY Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BLC9G20LS-361AVTY ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Ampleon USA Inc.

BLC8G27LS-210PVY,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLC8G27LS-210PVY

RF FET LDMOS 65V 17DB SOT12513

BLF6G38LS-50,112,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLF6G38LS-50,112

RF FET LDMOS 65V 17DB SOT12513

BLF6G38LS-50,118,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLF6G38LS-50,118

RF FET LDMOS 65V 17DB SOT12513

BLP7G07S-140PY,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLP7G07S-140PY

RF FET LDMOS 65V 17DB SOT12513

BLA1011-200,112,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLA1011-200,112

RF FET LDMOS 65V 17DB SOT12513

BLF248,112,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLF248,112

RF FET LDMOS 65V 17DB SOT12513

BLL1214-250,112,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLL1214-250,112

RF FET LDMOS 65V 17DB SOT12513

BLF145,112,https://www.jinftry.ru/product_detail/BLC9G20LS-361AVTY
BLF145,112

RF FET LDMOS 65V 17DB SOT12513

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP