NXP USA Inc. BFS17A,215
- BFS17A,215
- NXP USA Inc.
- RF TRANS NPN 15V 2.8GHZ TO236AB
- Transistors - Bipolar (BJT) - RF
- BFS17A,215 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 18430
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BFS17A,215 |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer NXP USA Inc. |
Description RF TRANS NPN 15V 2.8GHZ TO236AB |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23 (TO-236AB) |
Gain - |
Power - Max 300mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 25mA |
Voltage - Collector Emitter Breakdown (Max) 15V |
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA, 1V |
Frequency - Transition 2.8GHz |
Noise Figure (dB Typ @ f) 2.5dB @ 800MHz |
Package_case TO-236-3, SC-59, SOT-23-3 |
BFS17A,215 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BFS17A,215 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
NXP USA Inc.
BLS3135-65,114
RF TRANS NPN 75V 3.5GHZ CDFM2
BLS3135-50,114
RF TRANS NPN 75V 3.5GHZ CDFM2
BLS3135-20,114
RF TRANS NPN 75V 3.5GHZ CDFM2
BLS3135-10,114
RF TRANS NPN 75V 3.5GHZ CDFM2
BLS2731-10,114
RF TRANS NPN 75V 3.5GHZ CDFM2
BLT70,115
RF TRANS NPN 75V 3.5GHZ CDFM2
BFG590,215
RF TRANS NPN 75V 3.5GHZ CDFM2
BF240,112
RF TRANS NPN 75V 3.5GHZ CDFM2
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.