Nexperia USA Inc. BF822,215
- BF822,215
- Nexperia USA Inc.
- TRANS NPN 250V 0.05A SOT23
- Transistors - Bipolar (BJT) - Single
- BF822,215 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 2940
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BF822,215 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Nexperia USA Inc. |
Description TRANS NPN 250V 0.05A SOT23 |
Package Jinftry-Reel® |
Series Automotive, AEC-Q101 |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package TO-236AB |
Power - Max 250 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 50 mA |
Voltage - Collector Emitter Breakdown (Max) 250 V |
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA |
Current - Collector Cutoff (Max) 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 20V |
Frequency - Transition 60MHz |
Package_case TO-236-3, SC-59, SOT-23-3 |
BF822,215 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BF822,215 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BCP53-16,115
TRANS PNP 80V 1A SOT223
BCP52-16,115
TRANS PNP 80V 1A SOT223
BCP56,115
TRANS PNP 80V 1A SOT223
BCP51-16,115
TRANS PNP 80V 1A SOT223
PBSS4041NX,115
TRANS PNP 80V 1A SOT223
PBSS4041PX,115
TRANS PNP 80V 1A SOT223
BSP52,115
TRANS PNP 80V 1A SOT223
PBHV8560ZX
TRANS PNP 80V 1A SOT223
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Nexperia Releases Wafer Level 12 and 30V MOSFETs with Market Leading Efficiency
Nexperia Releases Wafer Level 12 and 30V MOSFETs with Market Leading Efficiency
Source: Contributed by the manufacturer • Author: Nexperia • 2022-07-27 10:14 • 294 reads • 0 comments
Three new devices in DSN1006 and DSN1010 can save power and simplify heat management in space constrained applications
Nijmegen, July 27, 2022: Nexperia, a high-capacity production expert in the field of basic semiconductor devices, today announced the launch of PMCB60XN and PMCB60XNE 30V N-channel small signal T