Fairchild Semiconductor BD244B
- BD244B
- Fairchild Semiconductor
- TRANS PNP 80V 6A TO-220
- Transistors - Bipolar (BJT) - Single
- BD244B Лист данных
- TO-220-3
- TO-220-3
- Lead free / RoHS Compliant
- 3044
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BD244B |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Fairchild Semiconductor |
Description TRANS PNP 80V 6A TO-220 |
Package TO-220-3 |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220 |
Power - Max 65W |
Transistor Type PNP |
Current - Collector (Ic) (Max) 6A |
Voltage - Collector Emitter Breakdown (Max) 80V |
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A |
Current - Collector Cutoff (Max) 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V |
Package_case TO-220-3 |
BD244B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BD244B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Fairchild Semiconductor
KSB546YTU
POWER BIPOLAR TRANSISTOR, 2A, 15
KSD526YTU
POWER BIPOLAR TRANSISTOR, 2A, 15
KSD526Y
POWER BIPOLAR TRANSISTOR, 2A, 15
BDX53C
POWER BIPOLAR TRANSISTOR, 2A, 15
FJP3305H2TU
POWER BIPOLAR TRANSISTOR, 2A, 15
KSD363YTU
POWER BIPOLAR TRANSISTOR, 2A, 15
KSD560RTSTU
POWER BIPOLAR TRANSISTOR, 2A, 15
FJP5304DTU
POWER BIPOLAR TRANSISTOR, 2A, 15
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.