Nexperia USA Inc. BCX70H,215
- BCX70H,215
- Nexperia USA Inc.
- TRANS NPN 45V 100MA TO236AB
- Transistors - Bipolar (BJT) - Single
- BCX70H,215 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 1263
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BCX70H,215 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Nexperia USA Inc. |
Description TRANS NPN 45V 100MA TO236AB |
Package Jinftry-Reel® |
Series Automotive, AEC-Q101 |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package TO-236AB |
Power - Max 250 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 45 V |
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA |
Current - Collector Cutoff (Max) 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 5V |
Frequency - Transition 250MHz |
Package_case TO-236-3, SC-59, SOT-23-3 |
BCX70H,215 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BCX70H,215 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BCV72,215
TRANS NPN 60V 0.1A SOT23
PMSS3904,115
TRANS NPN 60V 0.1A SOT23
PMSS3904,135
TRANS NPN 60V 0.1A SOT23
BC807-16W,115
TRANS NPN 60V 0.1A SOT23
BC807-16W,135
TRANS NPN 60V 0.1A SOT23
PMBT2907,215
TRANS NPN 60V 0.1A SOT23
BC807-25W,115
TRANS NPN 60V 0.1A SOT23
BC857W,115
TRANS NPN 60V 0.1A SOT23
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time
NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time
Nexperia announced the first P-channel MOSFET series products encapsulated by LFPAK56 (Power-SO8). The new device complies with the AEC-Q101 standard and is suitable for automotive applications. It can be used as an ideal alternative product of DPAK MOSFET. On the basis of ensuring performance, the encapsulation area is reduced by more than 50%. The new series of products can be selected within the operating voltage range of 3