Infineon Technologies BCR166E6393HTSA1
- BCR166E6393HTSA1
- Infineon Technologies
- BCR166 - DIGITAL TRANSISTOR
- Transistors - Bipolar (BJT) - Single
- BCR166E6393HTSA1 Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 13576
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BCR166E6393HTSA1 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Infineon Technologies |
Description BCR166 - DIGITAL TRANSISTOR |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
BCR166E6393HTSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BCR166E6393HTSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
BCW60FFE6327
BCW60 - LOW NOISE TRANSISTOR
BC80725E6327HTSA1
BCW60 - LOW NOISE TRANSISTOR
MMBTA56LT1
BCW60 - LOW NOISE TRANSISTOR
BFR740EL3E6829XTSA1
BCW60 - LOW NOISE TRANSISTOR
FF650R17IE4PBOSA1
BCW60 - LOW NOISE TRANSISTOR
FF600R17KE3B2S1NOSA1
BCW60 - LOW NOISE TRANSISTOR
FZ800R17KF6CB2NOSA1
BCW60 - LOW NOISE TRANSISTOR
FZ1200R17KF4CNOSA1
BCW60 - LOW NOISE TRANSISTOR
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
Infineon TRENCHSTOP IGBT7 S7
Infineon TRENCHSTOP IGBT7 S7
Infineon Technologies TRENCHSTOP IGBT7 S7 offers a broad 1200V portfolio for all industrial applications requiring short circuit capability/robustness. IGBT7 S7 is a high efficiency short circuit robust discrete IGBT with at least 10% lower saturation voltage than other products.
Infineon IGBT7 S7 offers a very flexible fully rated EC7 diode which significantly reduces the IGBT saturation V CEsat. IGBT7 offers excellent controllability and short-circuit tolerance
Infineon High Power Density SiC MOSFET
Infineon High Power Density SiC MOSFETs
New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1.
Next, we will introduce another device from Infi