Nexperia USA Inc. BCP55-16,115
- BCP55-16,115
- Nexperia USA Inc.
- TRANS NPN 60V 1A SOT-223
- Transistors - Bipolar (BJT) - Single
- BCP55-16,115 Лист данных
- TO-261-4, TO-261AA
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 10690
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BCP55-16,115 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Nexperia USA Inc. |
Description TRANS NPN 60V 1A SOT-223 |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package SOT-223 |
Power - Max 1.35 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 1 A |
Voltage - Collector Emitter Breakdown (Max) 60 V |
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V |
Frequency - Transition 180MHz |
Package_case TO-261-4, TO-261AA |
BCP55-16,115 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BCP55-16,115 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BCX52-16,115
TRANS PNP 60V 1A SOT89
PBSS4140T,215
TRANS PNP 60V 1A SOT89
PBSS4140T,235
TRANS PNP 60V 1A SOT89
BSR14,215
TRANS PNP 60V 1A SOT89
PHPT60415NYX
TRANS PNP 60V 1A SOT89
PBSS5350X,147
TRANS PNP 60V 1A SOT89
PBSS5350X,146
TRANS PNP 60V 1A SOT89
PBSS5350X,115
TRANS PNP 60V 1A SOT89
What is a bipolar transistor and what is its operating mode
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Nexperia BC856xQC-Q PNP
Nexperia BC856xQC-Q PNP
Nexperia BC856xQC-Q PNP transistors are 65V 100mA transistors ideal for general purpose switching and amplification. The BC856xQC-Q transistors feature high power dissipation, excellent thermal performance, and strong solder joints. The low operating temperature of these devices improves the overall reliability of the system
Nexperia BC856xQC-Q PNP transistors are available in a 1.4mm x 1.2mm x 0.48mm DFN1412D-3 (SOT8009) package. The side wettable flanks (SWFs) of th