BB659C02VH7912XTSA1

Infineon Technologies BB659C02VH7912XTSA1

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BB659C02VH7912XTSA1
  • Infineon Technologies
  • DIODE VAR CAP 30V 20MA SC79
  • Diodes - Variable Capacitance (Varicaps, Varactors)
  • BB659C02VH7912XTSA1 Лист данных
  • SC-79, SOD-523
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1Lead free / RoHS Compliant
  • 2295
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BB659C02VH7912XTSA1
Category
Diodes - Variable Capacitance (Varicaps, Varactors)
Manufacturer
Infineon Technologies
Description
DIODE VAR CAP 30V 20MA SC79
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Supplier Device Package
PG-SC79-2
Diode Type
Single
Voltage - Peak Reverse (Max)
30 V
Capacitance @ Vr, F
2.75pF @ 28V, 1MHz
Capacitance Ratio
15.3
Capacitance Ratio Condition
C1/C28
Q @ Vr, F
-
Package_case
SC-79, SOD-523

BB659C02VH7912XTSA1 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BB659C02VH7912XTSA1 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BB545E7904HTSA1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BB545E7904HTSA1

DIODE VAR CAP 30V 20MA SOD-323

BBY 66-02V H6327,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BBY 66-02V H6327

DIODE VAR CAP 30V 20MA SOD-323

BBY 65-02V H6327,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BBY 65-02V H6327

DIODE VAR CAP 30V 20MA SOD-323

BB639CE7904HTSA1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BB639CE7904HTSA1

DIODE VAR CAP 30V 20MA SOD-323

BBY5803WE6327HTSA1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BBY5803WE6327HTSA1

DIODE VAR CAP 30V 20MA SOD-323

BB535E7904HTSA1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BB535E7904HTSA1

DIODE VAR CAP 30V 20MA SOD-323

BB85702VH7902XTSA1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BB85702VH7902XTSA1

DIODE VAR CAP 30V 20MA SOD-323

BB844E6327HTSA1,https://www.jinftry.ru/product_detail/BB659C02VH7912XTSA1
BB844E6327HTSA1

DIODE VAR CAP 30V 20MA SOD-323

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

Infineon TRENCHSTOP IGBT7 S7

Infineon TRENCHSTOP IGBT7 S7 Infineon Technologies TRENCHSTOP IGBT7 S7 offers a broad 1200V portfolio for all industrial applications requiring short circuit capability/robustness. IGBT7 S7 is a high efficiency short circuit robust discrete IGBT with at least 10% lower saturation voltage than other products. Infineon IGBT7 S7 offers a very flexible fully rated EC7 diode which significantly reduces the IGBT saturation V CEsat. IGBT7 offers excellent controllability and short-circuit tolerance

Infineon High Power Density SiC MOSFET

Infineon High Power Density SiC MOSFETs New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1. Next, we will introduce another device from Infi

Infineon Technologies-Gate driver reinforced isolation

HV driver with 6kV isolation in a SO-8W package Flip chip package increases power density 200V half-bridge driver in SOIC-8 package Fluence and Northvolt to co-develop battery technology for Grid-scale energy storage Global consortium for power system operators and research institutes Addionics, Saint-Gobain Ceramics team on solid state battery tech Lead perovskite boosts solar cell efficiency over 25 percent 200kW SiC inverter hits 99 percent efficiency
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP