BAT54TWP_R1_00001

Panjit International Inc. BAT54TWP_R1_00001

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • BAT54TWP_R1_00001
  • Panjit International Inc.
  • SOT-363, SKY
  • Diodes - Rectifiers - Arrays
  • BAT54TWP_R1_00001 Лист данных
  • 6-TSSOP, SC-88, SOT-363
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001Lead free / RoHS Compliant
  • 1352
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
BAT54TWP_R1_00001
Category
Diodes - Rectifiers - Arrays
Manufacturer
Panjit International Inc.
Description
SOT-363, SKY
Package
Bulk
Series
-
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Diode Type
Schottky
Voltage - Forward (Vf) (Max) @ If
600 mV @ 100 mA
Current - Reverse Leakage @ Vr
2 µA @ 25 V
Diode Configuration
3 Independent
Voltage - DC Reverse (Vr) (Max)
30 V
Current - Average Rectified (Io) (per Diode)
200mA (DC)
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 125°C
Package_case
6-TSSOP, SC-88, SOT-363

BAT54TWP_R1_00001 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о BAT54TWP_R1_00001 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Panjit International Inc.

BAV99_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAV99_R1_00001

SOT-23, SWITCHING

BAV70_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAV70_R1_00001

SOT-23, SWITCHING

BAV199S_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAV199S_R1_00001

SOT-23, SWITCHING

BAT54S_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAT54S_R1_00001

SOT-23, SWITCHING

BAW56_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAW56_R1_00001

SOT-23, SWITCHING

BAV199_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAV199_R1_00001

SOT-23, SWITCHING

BAV199-AU_R1_000A1,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAV199-AU_R1_000A1

SOT-23, SWITCHING

BAS21A_R1_00001,https://www.jinftry.ru/product_detail/BAT54TWP-R1-00001
BAS21A_R1_00001

SOT-23, SWITCHING

What is diode?

What are diodes and their characteristics in electronics? Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP