Nexperia USA Inc. BAS19,215
- BAS19,215
- Nexperia USA Inc.
- DIODE GP 100V 200MA TO236AB
- Diodes - Rectifiers - Single
- BAS19,215 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 21663
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BAS19,215 |
Category Diodes - Rectifiers - Single |
Manufacturer Nexperia USA Inc. |
Description DIODE GP 100V 200MA TO236AB |
Package Cut Tape (CT) |
Series - |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package TO-236AB |
Diode Type Standard |
Current - Average Rectified (Io) 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA |
Current - Reverse Leakage @ Vr 100 nA @ 100 V |
Capacitance @ Vr, F 5pF @ 0V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 100 V |
Speed Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) 50 ns |
Operating Temperature - Junction 150°C (Max) |
Package_case TO-236-3, SC-59, SOT-23-3 |
BAS19,215 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BAS19,215 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BAS16,235
DIODE GP 100V 215MA TO236AB
BAS16,215
DIODE GP 100V 215MA TO236AB
PMBD914,235
DIODE GP 100V 215MA TO236AB
PMBD914,215
DIODE GP 100V 215MA TO236AB
PMLL4148L,135
DIODE GP 100V 215MA TO236AB
PMLL4148L,115
DIODE GP 100V 215MA TO236AB
PMEG3010EGWJ
DIODE GP 100V 215MA TO236AB
PMEG4010EGWJ
DIODE GP 100V 215MA TO236AB
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i