NXP USA Inc. BAP64-05,215
- BAP64-05,215
- NXP USA Inc.
- RF DIODE PIN 175V 250MW TO236AB
- Diodes - RF
- BAP64-05,215 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4178
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number BAP64-05,215 |
Category Diodes - RF |
Manufacturer NXP USA Inc. |
Description RF DIODE PIN 175V 250MW TO236AB |
Package Cut Tape (CT) |
Series - |
Operating Temperature -65°C ~ 150°C (TJ) |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23 (TO-236AB) |
Diode Type PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max) 175V |
Capacitance @ Vr, F 0.35pF @ 20V, 1MHz |
Current - Max 100 mA |
Power Dissipation (Max) 250 mW |
Resistance @ If, F 1.35Ohm @ 100mA, 100MHz |
Package_case TO-236-3, SC-59, SOT-23-3 |
BAP64-05,215 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BAP64-05,215 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
NXP USA Inc.
BAT54S,235
NOW NEXPERIA BAT54S - RECTIFIER
BAV99/8,215
NOW NEXPERIA BAT54S - RECTIFIER
1PS181,115
NOW NEXPERIA BAT54S - RECTIFIER
1PS181,135
NOW NEXPERIA BAT54S - RECTIFIER
BAV70T,115
NOW NEXPERIA BAT54S - RECTIFIER
1PS75SB45,115
NOW NEXPERIA BAT54S - RECTIFIER
1PS75SB45,135
NOW NEXPERIA BAT54S - RECTIFIER
BAS21AVD,165
NOW NEXPERIA BAT54S - RECTIFIER
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i