Vishay Semiconductor - Diodes Division AZ23B18-HE3-08
- AZ23B18-HE3-08
- Vishay Semiconductor - Diodes Division
- DIODE ZENER 18V 300MW SOT23
- Diodes - Zener - Arrays
- AZ23B18-HE3-08 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1116
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number AZ23B18-HE3-08 |
Category Diodes - Zener - Arrays |
Manufacturer Vishay Semiconductor - Diodes Division |
Description DIODE ZENER 18V 300MW SOT23 |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101, AZ23 |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 |
Tolerance ±2% |
Power - Max 300 mW |
Configuration 1 Pair Common Anode |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 100 nA @ 14 V |
Voltage - Zener (Nom) (Vz) 18 V |
Impedance (Max) (Zzt) 50 Ohms |
Package_case TO-236-3, SC-59, SOT-23-3 |
AZ23B18-HE3-08 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о AZ23B18-HE3-08 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
AZ23B5V6-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B5V1-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B51-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B4V7-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B4V3-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B47-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B43-G3-18
DIODE ZENER 5.6V 300MW SOT23
AZ23B3V9-G3-18
DIODE ZENER 5.6V 300MW SOT23
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic