Microchip Technology APTM120DA30CT1G
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- APTM120DA30CT1G
- Microchip Technology
- MOSFET N-CH 1200V 31A SP1
- Transistors - FETs, MOSFETs - Single
- APTM120DA30CT1G Лист данных
- SP1
- Bulk
-
Lead free / RoHS Compliant - 3379
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number APTM120DA30CT1G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Microchip Technology |
| Description MOSFET N-CH 1200V 31A SP1 |
| Package Bulk |
| Series POWER MOS 8™ |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SP1 |
| Supplier Device Package SP1 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 657W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 31A (Tc) |
| Rds On (Max) @ Id, Vgs 360mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs 560 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 14560 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case SP1 |
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