Microsemi Corporation APTDF200H20G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- APTDF200H20G
- Microsemi Corporation
- BRIDGE RECT 1PHASE 200V 285A SP6
- Diodes - Bridge Rectifiers
- APTDF200H20G Лист данных
- SP6
- Bulk
-
Lead free / RoHS Compliant - 4959
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number APTDF200H20G |
| Category Diodes - Bridge Rectifiers |
| Manufacturer Microsemi Corporation |
| Description BRIDGE RECT 1PHASE 200V 285A SP6 |
| Package Bulk |
| Series - |
| Operating Temperature -40°C ~ 175°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SP6 |
| Supplier Device Package SP6 |
| Technology Standard |
| Diode Type Single Phase |
| Voltage - Peak Reverse (Max) 200 V |
| Current - Average Rectified (Io) 285 A |
| Voltage - Forward (Vf) (Max) @ If 3 V @ 200 A |
| Current - Reverse Leakage @ Vr 150 µA @ 1200 V |
| Package_case SP6 |
APTDF200H20G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о APTDF200H20G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
APTDF200H20G сопутствующие товары
Комментарии
Microsemi Corporation
APTDF100H120G
BRIDGE RECT 1P 1.2KV 120A SP4
APTDF100H1201G
BRIDGE RECT 1P 1.2KV 120A SP4
VJ448XM
BRIDGE RECT 1P 1.2KV 120A SP4
MSD75-16
BRIDGE RECT 1P 1.2KV 120A SP4
VJ248M
BRIDGE RECT 1P 1.2KV 120A SP4
VJ247M
BRIDGE RECT 1P 1.2KV 120A SP4
VJ447M
BRIDGE RECT 1P 1.2KV 120A SP4
MSD75-12
BRIDGE RECT 1P 1.2KV 120A SP4
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
