APT31M100B2

Microchip Technology APT31M100B2

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  • APT31M100B2
  • Microchip Technology
  • MOSFET N-CH 1000V 32A T-MAX
  • Transistors - FETs, MOSFETs - Single
  • APT31M100B2 Лист данных
  • TO-247-3 Variant
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/APT31M100B2Lead free / RoHS Compliant
  • 20404
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
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Part Number
APT31M100B2
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Microchip Technology
Description
MOSFET N-CH 1000V 32A T-MAX
Package
Tube
Series
POWER MOS 8™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Supplier Device Package
T-MAX™ [B2]
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1040W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Rds On (Max) @ Id, Vgs
380mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8500 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3 Variant

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