Microsemi Corporation APT10SCD65KCT
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- APT10SCD65KCT
- Microsemi Corporation
- DIODE SILICON 650V 17A TO220
- Diodes - Rectifiers - Arrays
- APT10SCD65KCT Лист данных
- TO-220-3
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 25722
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number APT10SCD65KCT |
| Category Diodes - Rectifiers - Arrays |
| Manufacturer Microsemi Corporation |
| Description DIODE SILICON 650V 17A TO220 |
| Package Jinftry-Reel® |
| Series - |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220 |
| Diode Type Silicon Carbide Schottky |
| Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr 200 µA @ 650 V |
| Diode Configuration 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) 650 V |
| Current - Average Rectified (Io) (per Diode) 17A |
| Speed No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) 0 ns |
| Operating Temperature - Junction -55°C ~ 150°C |
| Package_case TO-220-3 |
APT10SCD65KCT Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о APT10SCD65KCT ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
APT10SCD65KCT сопутствующие товары
Комментарии
Microsemi Corporation
UPS1040CTE3
DIODE ARRAY SCHOTTKY 40V 10A
CPT600100
DIODE ARRAY SCHOTTKY 40V 10A
CPT30050
DIODE ARRAY SCHOTTKY 40V 10A
FST31180
DIODE ARRAY SCHOTTKY 40V 10A
FST20150
DIODE ARRAY SCHOTTKY 40V 10A
APT8DQ60KCTG
DIODE ARRAY SCHOTTKY 40V 10A
APT60DQ120LCTG
DIODE ARRAY SCHOTTKY 40V 10A
APT60D30LCTG
DIODE ARRAY SCHOTTKY 40V 10A
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
