Alpha & Omega Semiconductor Inc. AOD508
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- AOD508
- Alpha & Omega Semiconductor Inc.
- MOSFET N-CH 30V 22A/70A TO252
- Transistors - FETs, MOSFETs - Single
- AOD508 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2032
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number AOD508 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Alpha & Omega Semiconductor Inc. |
| Description MOSFET N-CH 30V 22A/70A TO252 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252 (DPAK) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta), 50W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 22A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2010 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
AOD508 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о AOD508 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
AOD508 сопутствующие товары
Комментарии
Alpha & Omega Semiconductor Inc.
AOD442
MOSFET N-CH 60V 7A/37A TO252
AOD424
MOSFET N-CH 60V 7A/37A TO252
AON6411
MOSFET N-CH 60V 7A/37A TO252
AON6246
MOSFET N-CH 60V 7A/37A TO252
AOB240L
MOSFET N-CH 60V 7A/37A TO252
AOT8N50
MOSFET N-CH 60V 7A/37A TO252
AOT29S50L
MOSFET N-CH 60V 7A/37A TO252
AO4492
MOSFET N-CH 60V 7A/37A TO252
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
